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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 7, Pages 900–904 (Mi phts6409)  
This article is cited in 4 scientific papers (total in 4 papers)

Electronic properties of semiconductors

Field dependence of the electron drift velocity along the hexagonal axis of 4$H$-SiC

P. A. Ivanov, A. S. Potapov, T. P. Samsonova, I. V. Grekhov

Ioffe Institute, St. Petersburg
Full-text PDF (300 kB) Citations (4)
Abstract: The forward current–voltage characteristics of mesa-epitaxial 4$H$-SiC Schottky diodes are measured in high electric fields (up to 4 $\times$ 10$^5$ V/cm) in the $n$-type base region. A semi-empirical formula for the field dependence of the electron drift velocity in 4$H$-SiC along the hexagonal axis of the crystal is derived. It is shown that the saturated drift velocity is (1.55 $\pm$ 0.05) $\times$ 10$^7$ cm/s in electric fields higher than 2 $\times$ 10$^5$ V/cm.
Received: 11.01.2016
Accepted: 18.01.2016
English version:
Semiconductors, 2016, Volume 50, Issue 7, Pages 883–887
DOI: https://doi.org/10.1134/S106378261607006X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. A. Ivanov, A. S. Potapov, T. P. Samsonova, I. V. Grekhov, “Field dependence of the electron drift velocity along the hexagonal axis of 4$H$-SiC”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 900–904; Semiconductors, 50:7 (2016), 883–887
Citation in format AMSBIB
\Bibitem{IvaPotSam16}
\by P.~A.~Ivanov, A.~S.~Potapov, T.~P.~Samsonova, I.~V.~Grekhov
\paper Field dependence of the electron drift velocity along the hexagonal axis of 4$H$-SiC
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 7
\pages 900--904
\mathnet{http://mi.mathnet.ru/phts6409}
\elib{https://elibrary.ru/item.asp?id=27368932}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 7
\pages 883--887
\crossref{https://doi.org/10.1134/S106378261607006X}
Linking options:
  • https://www.mathnet.ru/eng/phts6409
  • https://www.mathnet.ru/eng/phts/v50/i7/p900
    • This publication is cited in the following 4 articles:
    1. Vasily A. Krasnov, Stanislav V. Shutov, Sergey Yu Yerochin, Oleksii M. Demenskyi, “The Equation of Nonisothermal I–V Characteristic of a Schottky Diode With Thick Drift Layer”, IEEE Trans. Electron Devices, 70:10 (2023), 5007  crossref
    2. Vasily A. Krasnov, Sergey Yu. Yerochin, Oleksii M. Demenskyi, “Express method of electro-physical parameters extraction for power Schottky diodes”, Solid-State Electronics, 186 (2021), 108169  crossref
    3. A. A. Lebedev, P. A. Ivanov, M. E. Levinshtein, E. N. Mokhov, S. S. Nagalyuk, A. N. Anisimov, P. G. Baranov, “SiC-based electronics (100th anniversary of the Ioffe Institute)”, Phys. Usp., 62:8 (2019), 754–794  mathnet  mathnet  crossref  crossref  isi  scopus
    4. P. A. Ivanov, A. S. Potapov, T. P. Samsonova, I. V. Grekhov, “Current–voltage characteristics of high-voltage 4$H$-SiC $p^{+}$–$n_{0}$–$n^{+}$ diodes in the avalanche breakdown mode”, Semiconductors, 51:3 (2017), 374–378  mathnet  mathnet  crossref  crossref
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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