A. A. Lebedev, P. A. Ivanov, M. E. Levinshtein, E. N. Mokhov, S. S. Nagalyuk, A. N. Anisimov, P. G. Baranov, “SiC-based electronics (100th anniversary of the Ioffe Institute)”, UFN, 189:8 (2019), 803–848; Phys. Usp., 62:8 (2019), 754

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Uspekhi Fizicheskikh Nauk, 2019, Volume 189, Number 8, Pages 803–848
DOI: https://doi.org/10.3367/UFNr.2018.10.038437 (Mi ufn6380)

This article is cited in 16 scientific papers (total in 16 papers)

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SiC-based electronics (100th anniversary of the Ioffe Institute)

A. A. Lebedev, P. A. Ivanov, M. E. Levinshtein, E. N. Mokhov, S. S. Nagalyuk, A. N. Anisimov, P. G. Baranov

Ioffe Institute, St. Petersburg

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DOI: https://doi.org/10.3367/UFNr.2018.10.038437

Abstract: We review the history and modern state of silicon carbide and SiC-based devices. The main techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC structures used for post-growth processing are briefly reviewed. The state of the art achieved in developing SiC devices is presented. The main problems that occur in developing SiC equipment and prospects for designing and developing such equipment are analyzed.

Keywords: silicon carbide, bulk crystal, sublimation, polytype, lateral overgrowth, dislocation, high-voltage power diode, high-voltage subnanosecond pulse diode, thyristor, bipolar junction transistor, analytic model, computer simulation, color center, spin, sensorics, magnetic field, ODMR, graphene, two-dimensional material, Raman spectroscopy.

Funding agency	Grant number
Russian Science Foundation	16-42-01098

Received: September 4, 2018
Revised: October 1, 2018
Accepted: October 4, 2018

English version:
Physics–Uspekhi, 2019, Volume 62, Issue 8, Pages 754–794
DOI: https://doi.org/10.3367/UFNe.2018.10.038437

Bibliographic databases:

Document Type: Article

PACS: 81.05.ue, 81.10.-h, 85.30.-z

Language: Russian

Citation: A. A. Lebedev, P. A. Ivanov, M. E. Levinshtein, E. N. Mokhov, S. S. Nagalyuk, A. N. Anisimov, P. G. Baranov, “SiC-based electronics (100th anniversary of the Ioffe Institute)”, UFN, 189:8 (2019), 803–848; Phys. Usp., 62:8 (2019), 754–794

Citation in format AMSBIB

\Bibitem{LebIvaLev19}

\by A.~A.~Lebedev, P.~A.~Ivanov, M.~E.~Levinshtein, E.~N.~Mokhov, S.~S.~Nagalyuk, A.~N.~Anisimov, P.~G.~Baranov

\paper SiC-based electronics (100th anniversary of the Ioffe Institute)

\jour UFN

\yr 2019

\vol 189

\issue 8

\pages 803--848

\mathnet{http://mi.mathnet.ru/ufn6380}

\crossref{https://doi.org/10.3367/UFNr.2018.10.038437}

\adsnasa{https://adsabs.harvard.edu/cgi-bin/bib_query?2019PhyU...62..754L}

\elib{https://elibrary.ru/item.asp?id=43230984}

\transl

\jour Phys. Usp.

\yr 2019

\vol 62

\issue 8

\pages 754--794

\crossref{https://doi.org/10.3367/UFNe.2018.10.038437}

\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000504891900002}

\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-85076766922}

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This publication is cited in the following 16 articles:

Canglong Wang, Zhaocang Meng, Jianke Tian, Yiwen Liu, Yafeng Shu, Haibo Wu, Lei Yang, “High-throughput screening for high thermal conductivity SiC ceramic systems: Experimental and multiscale simulation investigation”, Ceramics International, 2025
D. I. Zainutdinov, R. A. Voronkov, S. A. Gorbunov, N. Medvedev, R. A. Rymzhanov, M. V. Sorokin, A. E. Volkov, “Modeling of Temperature Effects on the Formation of Tracks of Swift Heavy Ions in Silicon Carbide”, J. Surf. Investig., 18:3 (2024), 683
A. A. Lebedev, A. V. Sakharov, V. V. Kozlovski, D. A. Malevsky, A. E. Nikolaev, M. E. Levinshtein, “Effect of Proton and Electron Irradiation on the Parameters of Gallium Nitride Schottky Diodes”, Semiconductors, 58:5 (2024), 433
A. A. Lebedev, V. V. Kozlovski, M. E. Levinshtein, D. A. Malevsky, R. A. Kuzmin, “Electron irradiation hardness of high-voltage 4H-SiC Schottky diodes in the operating temperature range”, Semiconductors, 57:5 (2023), 239
Ning Guo, Yicheng Pei, Weilong Yuan, Yunkai Li, Siqi Zhao, Shangyu Yang, Yang Zhang, Xingfang Liu, “Application of methyl trichlorosilane in SiC growth”, 2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS), 2023, 6
S. Yu. Davydov, O. V. Posrednik, “Electron states of atoms in monolayers adsorbed on silicon carbide”, Semiconductors, 57:2 (2023), 100
Ning Guo, Yicheng Pei, Weilong Yuan, Yunkai Li, Siqi Zhao, Shangyu Yang, Yang Zhang, Xingfang Liu, “Layered epitaxial growth of 3C/4H silicon carbide confined by surface micro-nano steps”, Crystals, 13:7 (2023), 1123
E. N. Mokhov, V. Yu. Davydov, A. N. Smirnov, S. S. Nagaluk, “Growth of hexagonal boron nitride (hBN) on silicon carbide substrates by the physical vapor transport method”, Semiconductors, 57:11 (2023), 483
T. Argunova, V. Kohn, “Problems with evaluation of micro-pore size in silicon carbide using synchrotron X-ray phase contrast imaging”, Materials, 15:3 (2022), 856
V. Kohn, T. Argunova, “Near-field phase-contrast imaging of micropores in silicon carbide crystals with synchrotron radiation”, Phys. Status Solidi B-Basic Solid State Phys., 259:4 (2022), 2100651, 2100651
A. A. Lebedev, V. V. Kozlovski, M. E. Levinshtein, D. A. Malevsky, G. A. Oganesyan, A. M. Strel'chuk, K. S. Davydovskaya, “Annealing high-voltage 4H-SiC Schottky diodes irradiated with electrons at a high temperature”, Semiconductors, 56:3 (2022), 189
M. E. Levinshtein, A. A. Lebedev, V. V. Kozlovski, D. A. Malevsky, R. A. Kuzmin, G. A. Oganesyan, “Current-voltage characteristics and DLTS spectra of high voltage SiC Schottky diodes irradiated with electrons at high temperatures”, Solid-State Electronics, 196 (2022), 108405
S.Yu. Davydov, O.V. Posrednik, “Adsorption of Group-II and -Vi atoms on silicon-carbide polytypes”, Semiconductors, 55:4 (2021), 399–404
V. Yu. Yurov, V. G. Ralchenko, A. K. Martyanov, I. A. Antonova, V. S. Sedov, A. A. Khomich, V. V. Voronov, S. S. Savin, M. Y. Shevchenko, A. P. Bolshakov, “Epitaxial growth of 3C-SiC film by microwave plasma chemical vapor deposition in H $_2$ -CH $_4$ -SiH $_4$ mixtures: Optical emission spectroscopy study”, J. Vac. Sci. Technol. A, 39:2 (2021), 023002
Ulrike Grossner, Joachim K. Grillenberger, Judith Woerle, Marianne E. Bathen, Johanna Müting, Wide Bandgap Semiconductors for Power Electronics, 2021, 137
P. A. Ivanov, T. P. Samsonova, A. S. Potapov, M. F. Kudoyarov, “High-voltage fast recovery avalanche diodes on silicon carbide”, J. Commun. Technol. Electron., 65:8 (2020), 956–961

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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