S. A. Karandashov, B. A. Matveev, M. A. Remennyi, “Indium arsenide-based spontaneous emission sources (review: a decade later)”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 147–157; Semiconductors, 53:2 (2019), 139

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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 2, Pages 147–157
DOI: https://doi.org/10.21883/FTP.2019.02.47090.8799 (Mi phts5578)

This article is cited in 15 scientific papers (total in 15 papers)

Reviews

Indium arsenide-based spontaneous emission sources (review: a decade later)

S. A. Karandashov^a, B. A. Matveev^a, M. A. Remennyi^ab

^a Ioffe Institute, St. Petersburg
^b IoffeLED Ltd., St. Petersburg

Full-text PDF (531 kB) Citations (15)

DOI: https://doi.org/10.21883/FTP.2019.02.47090.8799

Abstract: The results of investigations of light-emitting diodes based on heterostructures with an InAs active region grown by liquid phase and metalorganic vapor-phase epitaxy over the last decade are reviewed. The near-field pattern, L – I and I – V characteristics, and quantum efficiency of point-contact and flip-chip light-emitting diodes are analyzed in a wide temperature range.

Funding agency	Grant number
Ministry of Education and Science of the Russian Federation	14.576.21.0104

Received: 12.12.2017
Revised: 16.04.2018

English version:
Semiconductors, 2019, Volume 53, Issue 2, Pages 139–149
DOI: https://doi.org/10.1134/S1063782619020131

Bibliographic databases:

Document Type: Article

Language: Russian

Citation: S. A. Karandashov, B. A. Matveev, M. A. Remennyi, “Indium arsenide-based spontaneous emission sources (review: a decade later)”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 147–157; Semiconductors, 53:2 (2019), 139–149

Citation in format AMSBIB

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\paper Indium arsenide-based spontaneous emission sources (review: a decade later)

\jour Fizika i Tekhnika Poluprovodnikov

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\vol 53

\issue 2

\pages 147--157

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\crossref{https://doi.org/10.21883/FTP.2019.02.47090.8799}

\elib{https://elibrary.ru/item.asp?id=37476726}

\transl

\jour Semiconductors

\yr 2019

\vol 53

\issue 2

\pages 139--149

\crossref{https://doi.org/10.1134/S1063782619020131}

Linking options:

https://www.mathnet.ru/eng/phts5578

https://www.mathnet.ru/eng/phts/v53/i2/p147

This publication is cited in the following 15 articles:

N. A. Sanjarovskii, I. B. Parfenteva, T. G. Yugova, S. N. Knyazev, “Defect structure of tin-doped inas single crystals grown by the Czochralski method”, Kristallografiâ, 69:3 (2024), 400
S. A. Karandashev, A. A. Klimov, T. S. Lukhmyrina, B. A. Matveev, M. A. Remennyi, A. A. Usikova, “On-Chip ATR Sensor (λ = 3.4 μm) Based on InAsSbP/InAs Double Heterostructure for the Determination of Ethanol Concentration in Aqueous Solutions”, Opt. Spectrosc., 131:1 (2023), 31
N. A. Sanjarovskii, I. B. Parfenteva, T. G. Yugova, S. N. Knyazev, “Defect Structure of Tin-Doped InAs Single Crystals Grown by the Czochralski Method”, Crystallogr. Rep., 67:7 (2022), 1095
Sergey A. Karandashev, Tatiana S. Lukhmyrina, Boris A. Matveev, Maxim A. Remenny, Anna A. Usikova, “p‐InAsSbP/n‐InAs Double Heterostructure as an On‐Chip Midinfrared Evanescent Wave Sensor of Liquids”, Physica Status Solidi (a), 219:2 (2022)
N. Dyakonova, S.A. Karandashev, M.E. Levinshtein, B.A. Matveev, M.A. Remennyi, “Low frequency noise in p-InAsSbP/n-InAs/n-InAsSbP and p-InAsSbP/n-InAsSbP mid-IR light emitting diodes”, Infrared Physics & Technology, 125 (2022), 104301
N. Dyakonova, S.A. Karandashev, M.E. Levinshtein, B.A. Matveev, M.A. Remennyi, A.A. Usikova, “Low frequency noise in P-InAsSbP/n-InAs infrared light emitting diode-photodiode pairs”, Infrared Physics & Technology, 117 (2021), 103867
A. A. Semakova, N. L. Bazhenov, K. J. Mynbaev, A. V. Chernyaev, S. S. Kizhaev, N. D. Stoyanov, “Study of the current–voltage characteristics of InAsSb-based LED heterostructures in the 4.2–300 K temperature range”, Semiconductors, 55:6 (2021), 557–561
A. A. Semakova, A. M. Smirnov, N. L. Bazhenov, K. D. Mynbaev, A. A. Pivovarova, A. V. Chernyaev, S. S. Kizhaev, N. D. Stoyanov, “Spectral and Electrical Properties of LED Heterostructures with InAs-based Active Layer”, Semiconductors, 55:12 (2021), 989
A. A. Semakova, S. N. Lipnitskaya, K. J. Mynbaev, N. L. Bazhenov, S. S. Kizhaev, A. V. Chernyaev, N. D. Stoyanov, H. Lipsanen, “Experimental study and simulation of the spectral characteristics of LED heterostructures with an inas active region”, Tech. Phys. Lett., 46:2 (2020), 150–153
B. A. Matveev, V. I. Ratushnyi, A. Yu. Rybalchenko, “Localization of current flow in thermophotovoltaic converters based on InAsSbP/InAs double heterostructures”, Tech. Phys., 65:5 (2020), 799–804
N. Dyakonova, S.A. Karandashev, M.E. Levinshtein, B.A. Matveev, M.A. Remennyi, “Low frequency noise in double heterostructure P-InAsSbP/n-InAs mid-IR photodiodes at cryogenic temperature: Photovoltaic mode and forward bias”, Infrared Physics & Technology, 111 (2020), 103460
N Dyakonova, S A Karandashev, M E Levinshtein, B A Matveev, M A Remennyi, “Low frequency noise in reverse biased double heterostructure P-InAsSbP/n-InAs infrared photodiodes”, Semicond. Sci. Technol., 35:7 (2020), 075010
A A Semakova, S N Lipnitskaya, N L Bazhenov, S S Kizhaev, A V Chernyaev, N D Stoyanov, K D Mynbaev, “Spontaneous and stimulated emission in InAs-based LED heterostructures”, J. Phys.: Conf. Ser., 1400:6 (2019), 066044
N V Dyakonova, S A Karandashev, M E Levinshtein, B A Matveev, M A Remennyi, “Room temperature low frequency noise in n+-InAs/n-InAsSbP/InAs/p-InAsSbP double heterostructure infrared photodiodes”, Semicond. Sci. Technol., 34:10 (2019), 105015
B. A. Matveev, G. Yu. Sotnikova, “Mid-IR leds based on A$^{3}$B$^{5}$ heterostructures for gas analyzers. Capabilities and applications 2014–2018”, Optics and Spectroscopy, 127:2 (2019), 322–327

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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