Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 90, Issue 5, Pages 835–840
DOI: https://doi.org/10.21883/JTF.2020.05.49187.14-19 (Mi jtf5318) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Solid-State Electronics

Localization of current flow in thermophotovoltaic converters based on InAsSbP/InAs double heterostructures

B. A. Matveevab, V. I. Ratushnyic, A. Yu. Rybalchenkoc

a Ioffe Institute, St. Petersburg
b IoffeLED Ltd., St. Petersburg
c Volgodonsk Engineering and Technology Institute, Branch of National Research Nuclear University Moscow Engineering Physics Institute
Full-text PDF (1523 kB) Citations (2)
DOI: https://doi.org/10.21883/JTF.2020.05.49187.14-19
Abstract: The electrical performance of thermophotovoltaic converters with a flip-chip design based on p-InAsSbP/n-InAs/n-InAsSbP double heterostructures with the substrate completely or partially removed is examined. The influence of resistance of different parts of the structure on the spatial distribution of current density in the active region is revealed, and the conditions for maximizing the efficiency of photocurrent collection and minimizing confluence are determined.
Keywords: thermophotovoltaic converter, InAsSbP/InAs heterostructures, current-voltage characteristics, current density distribution.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 14.576.21.0104
The work at IoffeLED Ltd. was supported by the Federal targeted program "Development of Large-Sized Photosensitive Elements for the Spectral Ranges of 2.5–3.5, 2.5–4.5, and 2.5–5.5 μm Based on InAs Heterostructures and InAsSbP Solid Solutions" (contract code 14.576.21.0104, ID: RFMEFI57618X0104).
Received: 17.01.2019
Revised: 07.05.2019
Accepted: 13.11.2019
English version:
Technical Physics, 2020, Volume 65, Issue 5, Pages 799–804
DOI: https://doi.org/10.1134/S1063784220050187
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: B. A. Matveev, V. I. Ratushnyi, A. Yu. Rybalchenko, “Localization of current flow in thermophotovoltaic converters based on InAsSbP/InAs double heterostructures”, Zhurnal Tekhnicheskoi Fiziki, 90:5 (2020), 835–840; Tech. Phys., 65:5 (2020), 799–804
Citation in format AMSBIB
\Bibitem{MatRatRyb20}
\by B.~A.~Matveev, V.~I.~Ratushnyi, A.~Yu.~Rybalchenko
\paper Localization of current flow in thermophotovoltaic converters based on InAsSbP/InAs double heterostructures
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 90
\issue 5
\pages 835--840
\mathnet{http://mi.mathnet.ru/jtf5318}
\crossref{https://doi.org/10.21883/JTF.2020.05.49187.14-19}
\elib{https://elibrary.ru/item.asp?id=42906019}
\transl
\jour Tech. Phys.
\yr 2020
\vol 65
\issue 5
\pages 799--804
\crossref{https://doi.org/10.1134/S1063784220050187}
Linking options:
  • https://www.mathnet.ru/eng/jtf5318
  • https://www.mathnet.ru/eng/jtf/v90/i5/p835
    • This publication is cited in the following 2 articles:
    1. B. A. Matveev, V. I. Ratushnyi, A. Yu. Rybal'chenko, “Spatial Electroluminescence Distribution and Internal Quantum Efficiency in Substrate Free InAsSbP/InAsSb Double Heterostructure”, Semiconductors, 58:2 (2024), 149  crossref
    2. A A Klimov, R E Kunkov, T S Lukhmyrina, B A Matveev, N M Lebedeva, M A Remennyi, “Room temperature mid-IR two-color photodiodes with InAs and InAs0.9Sb0.1 absorbing layers”, J. Phys.: Conf. Ser., 1697:1 (2020), 012180  crossref
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Zhurnal Tekhnicheskoi Fiziki Zhurnal Tekhnicheskoi Fiziki
    Statistics & downloads:
    Abstract page:67
    Full-text PDF :19
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025