Loading [MathJax]/jax/output/CommonHTML/jax.js
Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 88, Issue 1, Pages 89–92
DOI: https://doi.org/10.21883/JTF.2018.01.45488.2327 (Mi jtf6024) 		 
This article is cited in 4 scientific papers (total in 4 papers)

Optics

Generation of high-voltage pulses by sharp-recovery SiC drift diodes (n-base versus p-base diodes)

P. A. Ivanov, I. V. Grekhov

Ioffe Institute, St. Petersburg
Full-text PDF (139 kB) Citations (4)
DOI: https://doi.org/10.21883/JTF.2018.01.45488.2327
Abstract: The time characteristics of pulse generators based on sharp-recovery 4H : SiC drift diodes have been calculated. It has been found that the speed of n-base 4H-SiC diodes is superior to that of p-base diodes with the amplitude and initial pedestal in the output voltage (< 5% of the amplitude) versus the time curve being the same.
Funding agency Grant number
Russian Science Foundation 14-29-00094
Received: 11.05.2017
English version:
Technical Physics, 2018, Volume 63, Issue 1, Pages 86–89
DOI: https://doi.org/10.1134/S1063784218010152
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. A. Ivanov, I. V. Grekhov, “Generation of high-voltage pulses by sharp-recovery SiC drift diodes (n-base versus p-base diodes)”, Zhurnal Tekhnicheskoi Fiziki, 88:1 (2018), 89–92; Tech. Phys., 63:1 (2018), 86–89
Citation in format AMSBIB
\Bibitem{IvaGre18}
\by P.~A.~Ivanov, I.~V.~Grekhov
\paper Generation of high-voltage pulses by sharp-recovery SiC drift diodes ($n$-base versus $p$-base diodes)
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2018
\vol 88
\issue 1
\pages 89--92
\mathnet{http://mi.mathnet.ru/jtf6024}
\crossref{https://doi.org/10.21883/JTF.2018.01.45488.2327}
\elib{https://elibrary.ru/item.asp?id=32737524}
\transl
\jour Tech. Phys.
\yr 2018
\vol 63
\issue 1
\pages 86--89
\crossref{https://doi.org/10.1134/S1063784218010152}
Linking options:
  • https://www.mathnet.ru/eng/jtf6024
  • https://www.mathnet.ru/eng/jtf/v88/i1/p89
    • This publication is cited in the following 4 articles:
    1. Dengyao Guo, Xiaoyan Tang, Jingkai Guo, Yu Zhou, Lejia Sun, Yu Zhang, Yuming Zhang, Qingwen Song, “Theoretical Model, Experimental Survey, and Optimization of Pulse Parameters for 4H-SiC Drift Step Recovery Diode”, IEEE Trans. Plasma Sci., 53:4 (2025), 721  crossref
    2. D. Guo, X. Tang, J. Guo, Y. Zhou, Z. Jiang, Y. Feng, Y. Zhang, Q. Song, 2024 IEEE International Conference on Plasma Science (ICOPS), 2024, 1  crossref
    3. P A Bokhan, P P Gugin, M A Lavrukhin, D E Zakrevsky, I V Schweigert, A L Alexandrov, “Investigation of the characteristics and mechanism of subnanosecond switching of a new type of plasma switches. I. Devices with counter-propagating electron beams—kivotrons”, Plasma Sources Sci. Technol., 29:8 (2020), 084002  crossref
    4. A. A. Lebedev, P. A. Ivanov, M. E. Levinshtein, E. N. Mokhov, S. S. Nagalyuk, A. N. Anisimov, P. G. Baranov, “SiC-based electronics (100th anniversary of the Ioffe Institute)”, Phys. Usp., 62:8 (2019), 754–794  mathnet  crossref  crossref  adsnasa  isi  elib
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Zhurnal Tekhnicheskoi Fiziki Zhurnal Tekhnicheskoi Fiziki
    Statistics & downloads:
    Abstract page:83
    Full-text PDF :31
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025