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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2017, Volume 43, Issue 12, Pages 9–17
DOI: https://doi.org/10.21883/PJTF.2017.12.44703.16644
(Mi pjtf6193)
 

This article is cited in 1 scientific paper (total in 1 paper)

Injection of emitted electrons in a multigrained semiconductor nanostructure

N. D. Zhukova, A. A. Khazanova, Ya. E. Pereverzevb

a Ref-Svet Company, Saratov, Russia
b Saratov State University
Full-text PDF (146 kB) Citations (1)
Abstract: The mechanism of injection of emitted electrons into submicron grains of semiconductors has been studied by approximating their experimental current–voltage (I–V) characteristics. It is concluded that the injection in both single-crystalline and multigrained semiconductor structure can be described by the same physical model based on the notions of electron tunneling via the surface barrier and diffusion-drift transport of nonequilibrium electrons in the semiconductor. A determining role belongs to the I–V characteristic described by a power law with exponents from 2 to 4. Analysis of I–V curves allows the product of mobility and diffusion length of nonequilibrium electrons to be estimated. The obtained results can be used in the investigation and creation of multigrained semiconductor structures for gas sensors, optical sensors, and detectors and sources of infrared and terahertz radiation.
Received: 27.12.2016
English version:
Technical Physics Letters, 2017, Volume 43, Issue 6, Pages 547–550
DOI: https://doi.org/10.1134/S106378501706027X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. D. Zhukov, A. A. Khazanov, Ya. E. Pereverzev, “Injection of emitted electrons in a multigrained semiconductor nanostructure”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:12 (2017), 9–17; Tech. Phys. Lett., 43:6 (2017), 547–550
Citation in format AMSBIB
\Bibitem{ZhuKhaPer17}
\by N.~D.~Zhukov, A.~A.~Khazanov, Ya.~E.~Pereverzev
\paper Injection of emitted electrons in a multigrained semiconductor nanostructure
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2017
\vol 43
\issue 12
\pages 9--17
\mathnet{http://mi.mathnet.ru/pjtf6193}
\crossref{https://doi.org/10.21883/PJTF.2017.12.44703.16644}
\elib{https://elibrary.ru/item.asp?id=29359313}
\transl
\jour Tech. Phys. Lett.
\yr 2017
\vol 43
\issue 6
\pages 547--550
\crossref{https://doi.org/10.1134/S106378501706027X}
Linking options:
  • https://www.mathnet.ru/eng/pjtf6193
  • https://www.mathnet.ru/eng/pjtf/v43/i12/p9
  • This publication is cited in the following 1 articles:
    1. D. V. Krylsky, N. D. Zhukov, “Synthesis and properties of indium antimonide big quantum dots”, Tech. Phys. Lett., 46:9 (2020), 901–904  mathnet  mathnet  crossref  crossref
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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