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This article is cited in 7 scientific papers (total in 7 papers)
Mechanisms of current transfer in electrodeposited layers of submicron semiconductor particles
N. D. Zhukova, D. S. Mosiyasha, I. V. Sinevb, A. A. Khazanova, A. V. Smirnovb, I. V. Lapshinc a Ref-SVET Company, Saratov, Russia
b Saratov State University
c State Research and Design Institute of the Rare Metal Industry, Moscow, Russia
Abstract:
Current–voltage (I–V) characteristics of conductance in multigrain layers of submicron particles of silicon, gallium arsenide, indium arsenide, and indium antimonide have been studied. Nanoparticles of all semiconductors were obtained by processing initial single crystals in a ball mill and applied after sedimentation onto substrates by means of electrodeposition. Detailed analysis of the I–V curves of electrodeposited layers shows that their behavior is determined by the mechanism of intergranular tunneling emission from near-surface electron states of submicron particles. Parameters of this emission process have been determined. The proposed multigrain semiconductor structures can be used in gas sensors, optical detectors, IR imagers, etc.
Received: 27.12.2016
Citation:
N. D. Zhukov, D. S. Mosiyash, I. V. Sinev, A. A. Khazanov, A. V. Smirnov, I. V. Lapshin, “Mechanisms of current transfer in electrodeposited layers of submicron semiconductor particles”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:24 (2017), 72–79; Tech. Phys. Lett., 43:12 (2017), 1124–1127
Linking options:
https://www.mathnet.ru/eng/pjtf6047 https://www.mathnet.ru/eng/pjtf/v43/i24/p72
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