Abstract:
The influence of excitation photons energy on the relaxation times of photoexcited carriers is studied. The involved relaxation mechanisms are evaluated and the reflection coefficient of the InGaAs/InAlAs superlattice heterostructures is analyzed. A model is built for the reflection coefficient of the InAlAs barrier layer, depending on the excitation photons energy. The resonance behavior of the reflection coefficient is explained.
Citation:
A. M. Buryakov, D. I. Khusyainov, E. D. Mishina, R. A. Khabibullin, A. E. Yachmenev, D. S. Ponomarev, “The role of excitation photons energy in the photoinduced carrier dynamics in InGaAs/InAlAs superlattice heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:23 (2018), 146–157; Tech. Phys. Lett., 44:12 (2018), 1115–1119
\Bibitem{BurKhuMis18}
\by A.~M.~Buryakov, D.~I.~Khusyainov, E.~D.~Mishina, R.~A.~Khabibullin, A.~E.~Yachmenev, D.~S.~Ponomarev
\paper The role of excitation photons energy in the photoinduced carrier dynamics in InGaAs/InAlAs superlattice heterostructures
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2018
\vol 44
\issue 23
\pages 146--157
\mathnet{http://mi.mathnet.ru/pjtf5630}
\crossref{https://doi.org/10.21883/PJTF.2018.23.47022.17469}
\elib{https://elibrary.ru/item.asp?id=37044664}
\transl
\jour Tech. Phys. Lett.
\yr 2018
\vol 44
\issue 12
\pages 1115--1119
\crossref{https://doi.org/10.1134/S1063785018120192}
Linking options:
https://www.mathnet.ru/eng/pjtf5630
https://www.mathnet.ru/eng/pjtf/v44/i23/p146
This publication is cited in the following 3 articles: