Abstract:
Prototype field-effect transistors based on solid solutions of transition metal dichalcogenides (TMDs) have been manufactured, and their spectral characteristics were studied using the photocurrent spectroscopy technique. Results of theoretical estimation of the total optical absorbance of two-dimensional (2D) TMD-based semiconductors of various thicknesses are presented as dependent on the light wavelength with allowance for the multiray interference. It is established that the interference effect significantly contributes to the resulting shapes of spectral characteristics of these optical sensors with variable thickness of TMD-based photosensitive layers.
Keywords:
two-dimensional semiconductors, spectroscopy, transition metal dichalcogenides, linear optics.
Citation:
A. Yu. Avdizhiyan, S. D. Lavrov, A. V. Kudryavtsev, A. P. Shestakova, M. V. Vasina, “Photoselectivity of optical sensors based on transition metal dichalcogenides: the effect of thickness on their spectral characteristics”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:12 (2019), 42–44; Tech. Phys. Lett., 45:6 (2019), 625–627
\Bibitem{AvdLavKud19}
\by A.~Yu.~Avdizhiyan, S.~D.~Lavrov, A.~V.~Kudryavtsev, A.~P.~Shestakova, M.~V.~Vasina
\paper Photoselectivity of optical sensors based on transition metal dichalcogenides: the effect of thickness on their spectral characteristics
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 12
\pages 42--44
\mathnet{http://mi.mathnet.ru/pjtf5409}
\crossref{https://doi.org/10.21883/PJTF.2019.12.47918.17773}
\elib{https://elibrary.ru/item.asp?id=41131063}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 6
\pages 625--627
\crossref{https://doi.org/10.1134/S106378501906018X}
Linking options:
https://www.mathnet.ru/eng/pjtf5409
https://www.mathnet.ru/eng/pjtf/v45/i12/p42
This publication is cited in the following 1 articles:
A. V. Gorbatova, D. I. Khusyainov, A. M. Buryakov, “Terahertz emission from a monolayer tungsten diselenide surface”, Tech. Phys. Lett., 45:12 (2019), 1262–1265