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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 17, Pages 39–42
DOI: https://doi.org/10.21883/PJTF.2019.17.48223.17880 (Mi pjtf5336) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Through concentration profiling of heterojunction solar cells

G. E. Yakovleva, I. A. Nyapshaevbc, I. S. Shahrayb, D. A. Andronikovb, V. I. Zubkova, E. I. Terukovabc

a Saint Petersburg Electrotechnical University "LETI"
b R&D Center TFTE, St.-Petersburg
c Ioffe Institute, St. Petersburg
Full-text PDF (114 kB) Citations (2)
DOI: https://doi.org/10.21883/PJTF.2019.17.48223.17880
Abstract: Electrochemical capacitance–voltage profiling has been used to examine heterojunction solar cells based on single-crystal silicon. Specific features of the electrochemical capacitance–voltage profiling of modern multilayer heterojunction solar cells have been analyzed. The distribution profiles of majority carriers across the whole thickness of the samples were obtained, including, for the first time, those in layers of conducting indium tin oxide.
Keywords: electrochemical capacitance-voltage profiling, heterojunction solar cells, single-crystal silicon, amorphous silicon.
Received: 17.05.2019
Revised: 17.05.2019
Accepted: 31.05.2019
English version:
Technical Physics Letters, 2019, Volume 45, Issue 9, Pages 890–893
DOI: https://doi.org/10.1134/S106378501909013X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. E. Yakovlev, I. A. Nyapshaev, I. S. Shahray, D. A. Andronikov, V. I. Zubkov, E. I. Terukov, “Through concentration profiling of heterojunction solar cells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:17 (2019), 39–42; Tech. Phys. Lett., 45:9 (2019), 890–893
Citation in format AMSBIB
\Bibitem{YakNyaSha19}
\by G.~E.~Yakovlev, I.~A.~Nyapshaev, I.~S.~Shahray, D.~A.~Andronikov, V.~I.~Zubkov, E.~I.~Terukov
\paper Through concentration profiling of heterojunction solar cells
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 17
\pages 39--42
\mathnet{http://mi.mathnet.ru/pjtf5336}
\crossref{https://doi.org/10.21883/PJTF.2019.17.48223.17880}
\elib{https://elibrary.ru/item.asp?id=41175057}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 9
\pages 890--893
\crossref{https://doi.org/10.1134/S106378501909013X}
Linking options:
  • https://www.mathnet.ru/eng/pjtf5336
  • https://www.mathnet.ru/eng/pjtf/v45/i17/p39
    • This publication is cited in the following 2 articles:
    1. George Yakovlev, Vasily Zubkov, “Back-side-illuminated CCDs for EBCCDs: “dead-layer” compensation”, J Mater Sci: Mater Electron, 32:1 (2021), 73  crossref
    2. G. E. Yakovlev, D. S. Frolov, V. I. Zubkov, “Diagnostics of semiconductor structures by electrochemical capacitance-voltage profiling technique”, Zavod. lab., Diagn. mater., 87:1 (2021), 35  crossref
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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