Abstract:
For the first time, the effect of irradiation at high temperature (“hot irradiation”) by protons on the capacitance – voltage and
current – voltage characteristics of silicon carbide based semiconductor devices was studied. We investigated commercial high-voltage (blocking voltage of 1700 V) integrated 4H-SiC Schottky diodes. Irradiation was carried out by protons with an energy of 15 MeV at temperatures of 20–400∘C. It has been established that the most sensitive to radiation parameter determining the radiation resistance of devices is the ohmic resistance of the base, which increases monotonically with increasing radiation dose D. It is shown that during “hot” irradiation, the radiation resistance of diodes significantly exceeds the resistance of diodes in low-temperature (“cold”) irradiation . It was concluded that, with increasing irradiation temperature, the rate of formation of deep centers in the upper half of the band gap of silicon carbide decreases.
IT Academy Program of Information Technology Foundation for Education
This work was supported in part by the Russian Science Foundation, project no. 16-12-10106. The investigation was also supported by the Estonian Research Council in the framework of Institutional Research Project IUT19-11 and Horizon 2020 ERA-Chair Grant “Cognitive Electronics COEL” – H2020-WIDESPREAD-2014-2 (agreement no. 668995, project TTU code VFP15051) and TAR16013 EXCITE IT Center of Excellence, as well as by the IT Academy Program of Information Technology Foundation for Education.
Citation:
V. V. Kozlovsky, O. Korolkov, K. S. Davydovskaja, A. A. Lebedev, M. E. Levinshteǐn, N. Sleptsuk, A. M. Strel'chuk, J. Toompuu, “Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide Schottky diodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020), 35–37; Tech. Phys. Lett., 46:3 (2020), 287–289
\Bibitem{KozKorDav20}
\by V.~V.~Kozlovsky, O.~Korolkov, K.~S.~Davydovskaja, A.~A.~Lebedev, M.~E.~Levinshte{\v\i}n, N.~Sleptsuk, A.~M.~Strel'chuk, J.~Toompuu
\paper Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide Schottky diodes
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 46
\issue 6
\pages 35--37
\mathnet{http://mi.mathnet.ru/pjtf5158}
\crossref{https://doi.org/10.21883/PJTF.2020.06.49163.18072}
\elib{https://elibrary.ru/item.asp?id=42776953}
\transl
\jour Tech. Phys. Lett.
\yr 2020
\vol 46
\issue 3
\pages 287--289
\crossref{https://doi.org/10.1134/S1063785020030244}
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This publication is cited in the following 8 articles:
A. A. Lebedev, D. A. Malevsky, V. V. Kozlovski, M. E. Levinshtein, “Persistent Relaxation Processes in Proton-Irradiated 4H-SiC”, Semiconductors, 58:1 (2024), 38
Ruxue Bai, Hongxia Guo, Yitian Liu, Yangfan Li, Fengqi Zhang, Wuying Ma, Hong Zhang, Xiaoping Ouyang, Xiangli Zhong, “Influence of Transport Mechanism and Defect Behavior on Leakage Current in 4H-SiC JBS Diodes After Neutron Irradiation”, IEEE Trans. Electron Devices, 71:10 (2024), 5956
V. V. Kozlovski, A. E. Vasil'ev, A. A. Lebedev, A. M. Strel'chuk, M. E. Levinshtein, “Role of Temperature in the Radiation-Induced Damage of Silicon-Carbide Diodes by High-Energy Charged Particles”, J. Surf. Investig., 16:3 (2022), 374
V. V. Kozlovski, A. E. Vasil'ev, A. A. Lebedev, “Role of Low-Temperature Annealing in Modifying Silicon Carbide by Beams of Charged Particles”, J. Synch. Investig., 15:2 (2021), 341
Alexander A. Lebedev, Vitali V. Kozlovski, Michael E. Levinshtein, Anton E. Ivanov, Klava S. Davydovskaya, “Effect of high temperature irradiation with 15 MeV protons on characteristics of power SiC Schottky diodes”, Solid-State Electronics, 181-182 (2021), 108009
A.A. Lebedev, V.V. Kozlovski, M.E. Levinshtein, A.E. Ivanov, K.S. Davydovskaya, V.S. Yuferev, A.V. Zubov, “Impact of high temperature electron irradiation on characteristics of power SiC Schottky diodes”, Radiation Physics and Chemistry, 185 (2021), 109514
E. L. Pankratov, “Influence of ion doping temperature on the distribution of dopant”, Radiation Effects and Defects in Solids, 175:11-12 (2020), 1052
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