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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 9, Pages 7–10
DOI: https://doi.org/10.21883/PJTF.2021.09.50898.18673 (Mi pjtf4794) 		 
This article is cited in 5 scientific papers (total in 5 papers)

Dielectric and pyroelectric properties of composites based on aluminum and gallium nitrides grown by chloride-hydride epitaxy on a silicon carbide-on-silicon substrate

A. V. Solnyshkina, O. N. Sergeevaa, O. A. Shustovaa, Sh. Sh. Sharofidinovbc, M. V. Staritsynd, E. Yu. Kaptelovb, S. A. Kukushkinc, I. P. Proninb

a Tver State University
b Ioffe Institute, St. Petersburg
c Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
d Prometei Central Research Institute of Structural Materials, St. Petersburg
Full-text PDF (602 kB) Citations (5)
DOI: https://doi.org/10.21883/PJTF.2021.09.50898.18673
Abstract: We studied the microstructure and the dielectric and pyroelectric properties of AlxGa1−xN composite epitaxial layers grown on SiC/Si(111) substrates by chloride-hydride epitaxy. The phenomenon of spontaneous (in the process of layer growth) formation of a system of heterojunctions was discovered. We obtained a material based on AlxGa1−xN epitaxial layers, which currently has one of the highest pyroelectric coefficients for crystals (or thin films) of aluminum nitride.
Keywords: aluminum nitride, gallium nitride, solid solutions of aluminum and gallium nitrides, silicon carbide on silicon, chloride-hydride epitaxy, dielectric properties, pyroelectric properties.
Funding agency Grant number
Russian Science Foundation 20-12-00193
This work was supported by the Russian Science Foundation, project no. 20-12-00193.
Received: 28.12.2020
Revised: 28.12.2020
Accepted: 26.01.2021
English version:
Technical Physics Letters, 2021, Volume 47, Issue 6, Pages 466–469
DOI: https://doi.org/10.1134/S1063785021050138
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Solnyshkin, O. N. Sergeeva, O. A. Shustova, Sh. Sh. Sharofidinov, M. V. Staritsyn, E. Yu. Kaptelov, S. A. Kukushkin, I. P. Pronin, “Dielectric and pyroelectric properties of composites based on aluminum and gallium nitrides grown by chloride-hydride epitaxy on a silicon carbide-on-silicon substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:9 (2021), 7–10; Tech. Phys. Lett., 47:6 (2021), 466–469
Citation in format AMSBIB
\Bibitem{SolSerShu21}
\by A.~V.~Solnyshkin, O.~N.~Sergeeva, O.~A.~Shustova, Sh.~Sh.~Sharofidinov, M.~V.~Staritsyn, E.~Yu.~Kaptelov, S.~A.~Kukushkin, I.~P.~Pronin
\paper Dielectric and pyroelectric properties of composites based on aluminum and gallium nitrides grown by chloride-hydride epitaxy on a silicon carbide-on-silicon substrate
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 47
\issue 9
\pages 7--10
\mathnet{http://mi.mathnet.ru/pjtf4794}
\crossref{https://doi.org/10.21883/PJTF.2021.09.50898.18673}
\elib{https://elibrary.ru/item.asp?id=46318366}
\transl
\jour Tech. Phys. Lett.
\yr 2021
\vol 47
\issue 6
\pages 466--469
\crossref{https://doi.org/10.1134/S1063785021050138}
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    • This publication is cited in the following 5 articles:
    1. N. S. Kamalova, N. N. Matveev, N. Yu. Evsikova, V. I. Lisitsyn, “Dynamics of potential difference changes in a biocomposite microsection for different temperature gradients”, Izvestiya Rossiiskoi akademii nauk. Seriya fizicheskaya, 87:9 (2023), 1322  crossref
    2. A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov, Sh. Sh. Sharofidinov, “Nanoindentation of AlGaN Films Formed on SiC/Si Substrates Grown by the Method of Coordinated Substitution of Atoms”, Izvestiya Rossiiskoi akademii nauk. Mekhanika tverdogo tela, 2023, no. 4, 53  crossref
    3. A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov, Sh. Sh. Sharofidinov, “Nanoindentation of AlGaN Films Formed on SiC/Si Substrates Grown by the Method of Coordinated Substitution of Atoms”, Mech. Solids, 58:4 (2023), 1089  crossref
    4. N. S. Kamalova, N. N. Matveev, N. Yu. Evsikova, V. I. Lisitsyn, “Dynamics of the Change in the Difference between Potentials in a Microsection of a Biocomposite at Different Temperature Gradients”, Bull. Russ. Acad. Sci. Phys., 87:9 (2023), 1354  crossref
    5. S. A. Kukushkin, A. V. Osipov, “Epitaxial Silicon Carbide on Silicon. Method of Coordinated Substitution of Atoms (A Review)”, Russ J Gen Chem, 92:4 (2022), 584  crossref
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