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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 8, Pages 1116–1124
DOI: https://doi.org/10.21883/FTP.2017.08.44800.8559 (Mi phts6080) 		 
This article is cited in 49 scientific papers (total in 49 papers)

Carbon systems

Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)

V. Yu. Davydovab, D. Yu. Usachovc, S. P. Lebedeva, A. N. Smirnovba, V. S. Levitskiia, I. A. Eliseyevca, P. A. Alekseeva, M. S. Dunaevskiia, O. Yu. Vilkovc, A. G. Rybkinc, A. A. Lebedeva

a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
c Saint Petersburg State University
Full-text PDF (640 kB) Citations (49)
DOI: https://doi.org/10.21883/FTP.2017.08.44800.8559
Abstract: The structural, chemical, and electronic properties of epitaxial graphene films grown by thermal decomposition of the Si-face of a semi-insulating 6H-SiC substrate in an argon environment are studied by Raman spectroscopy, atomic-force microscopy, the low-energy electron diffraction method, X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and X-ray absorption spectroscopy at the carbon K edge. It is shown that the results of a systematic integrated study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films with a small fraction of bilayer graphene inclusions.
Received: 31.01.2017
Accepted: 08.02.2017
English version:
Semiconductors, 2017, Volume 51, Issue 8, Pages 1072–1080
DOI: https://doi.org/10.1134/S1063782617080073
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. Yu. Davydov, D. Yu. Usachov, S. P. Lebedev, A. N. Smirnov, V. S. Levitskii, I. A. Eliseyev, P. A. Alekseev, M. S. Dunaevskii, O. Yu. Vilkov, A. G. Rybkin, A. A. Lebedev, “Study of the crystal and electronic structure of graphene films grown on 6H-SiC (0001)”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1116–1124; Semiconductors, 51:8 (2017), 1072–1080
Citation in format AMSBIB
\Bibitem{DavUsaLeb17}
\by V.~Yu.~Davydov, D.~Yu.~Usachov, S.~P.~Lebedev, A.~N.~Smirnov, V.~S.~Levitskii, I.~A.~Eliseyev, P.~A.~Alekseev, M.~S.~Dunaevskii, O.~Yu.~Vilkov, A.~G.~Rybkin, A.~A.~Lebedev
\paper Study of the crystal and electronic structure of graphene films grown on 6$H$-SiC (0001)
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 8
\pages 1116--1124
\mathnet{http://mi.mathnet.ru/phts6080}
\crossref{https://doi.org/10.21883/FTP.2017.08.44800.8559}
\elib{https://elibrary.ru/item.asp?id=29938293}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 8
\pages 1072--1080
\crossref{https://doi.org/10.1134/S1063782617080073}
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    • This publication is cited in the following 49 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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