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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 5, Page 496
(Mi phts5822)
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XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Excitons in Nanostructures
Biexciton binding energy in spherical quantum dots with Γ8 valence band
A. A. Golovatenko, M.A. Semina, A. V. Rodina, T. V. Shubina Ioffe Institute, 194021 St. Petersburg, Russia
Abstract:
The biexciton binding energy in spherical CdSe/ZnSe quantum dots is calculated variationally in the framework of k p-perturbation theory. Smooth and abrupt confining potentials with the same localization area of carriers are compared for two limiting cases of light hole to heavy hole mass ratio β = mlh/mhh: β = 1 and β = 0. Accounting for correlations between carriers results in their polarized configuration and significantly increases the biexciton binding energy in comparison with the first order perturbation theory. For β = 0 in smooth confining potentials there are three nearby biexciton states separated by small energy gap between 1S3/2 and 1P3/2 hole states.
Citation:
A. A. Golovatenko, M.A. Semina, A. V. Rodina, T. V. Shubina, “Biexciton binding energy in spherical quantum dots with Γ8 valence band”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 496; Semiconductors, 52:5 (2018), 554–557
Linking options:
https://www.mathnet.ru/eng/phts5822 https://www.mathnet.ru/eng/phts/v52/i5/p496
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Abstract page: | 61 | Full-text PDF : | 16 |
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