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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 8, Pages 949–953
DOI: https://doi.org/10.21883/FTP.2018.08.46225.8809 (Mi phts5769) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Semiconductor physics

On the fabrication of graphene p–n junctions and their application for detecting terahertz radiation

G. Yu. Vasil'evaa, Yu. B. Vasil'eva, S. N. Novikovb, S. N. Danilovc, S. D. Ganichevc

a Ioffe Institute, St. Petersburg
b Aalto University, Espoo, Finland
c Terahertz Center TerZ, University of Regensburg, Regensburg, Germany
Full-text PDF (447 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2018.08.46225.8809
Abstract: A new method for the formation of lateral p–n junctions in epitaxial graphene with the use of UV (ultraviolet) radiation is considered. The UV illumination method makes it possible to obtain large-size p–n junctions. Such p–n junctions are investigated in the photocurrent and photoconductivity modes under irradiation with terahertz radiation. The mechanisms of terahertz photoresponse in graphene p–n junctions are discussed.
Funding agency Grant number
Russian Foundation for Basic Research 16-02-00854
Deutsche Forschungsgemeinschaft SFB 1277-A04
GRK1570
Received: 27.12.2017
Accepted: 29.12.2017
English version:
Semiconductors, 2018, Volume 52, Issue 8, Pages 1077–1081
DOI: https://doi.org/10.1134/S1063782618080225
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. Yu. Vasil'eva, Yu. B. Vasil'ev, S. N. Novikov, S. N. Danilov, S. D. Ganichev, “On the fabrication of graphene p–n junctions and their application for detecting terahertz radiation”, Fizika i Tekhnika Poluprovodnikov, 52:8 (2018), 949–953; Semiconductors, 52:8 (2018), 1077–1081
Citation in format AMSBIB
\Bibitem{VasVasNov18}
\by G.~Yu.~Vasil'eva, Yu.~B.~Vasil'ev, S.~N.~Novikov, S.~N.~Danilov, S.~D.~Ganichev
\paper On the fabrication of graphene $p$--$n$ junctions and their application for detecting terahertz radiation
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 8
\pages 949--953
\mathnet{http://mi.mathnet.ru/phts5769}
\crossref{https://doi.org/10.21883/FTP.2018.08.46225.8809}
\elib{https://elibrary.ru/item.asp?id=35269442}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 8
\pages 1077--1081
\crossref{https://doi.org/10.1134/S1063782618080225}
Linking options:
  • https://www.mathnet.ru/eng/phts5769
  • https://www.mathnet.ru/eng/phts/v52/i8/p949
    • This publication is cited in the following 2 articles:
    1. K. A. Baryshnikov, “Terahertz transitions between Landau levels in graphene with different concentrations of electrons”, Fullerenes, Nanotubes and Carbon Nanostructures, 28:2 (2020), 135  crossref
    2. Albert F. Rigosi, Dinesh Patel, Martina Marzano, Mattias Kruskopf, Heather M. Hill, Hanbyul Jin, Jiuning Hu, Angela R. Hight Walker, Massimo Ortolano, Luca Callegaro, Chi-Te Liang, David B. Newell, “Atypical quantized resistances in millimeter-scale epitaxial graphene p-n junctions”, Carbon, 154 (2019), 230  crossref
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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