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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 11, Pages 1317–1320
DOI: https://doi.org/10.21883/FTP.2018.11.46591.13 (Mi phts5688) 		 
This article is cited in 2 scientific papers (total in 2 papers)

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

MBE growth and structural properties of GaP and InP nanowires on a SiC substrate with a graphene layer

R. R. Reznika, K. P. Kotlyarb, I. V. Ilkivb, I. P. Soshnikovbcd, S. P. Lebedevd, A. A. Lebedevd, D. A. Kirilenkod, P. A. Alekseevd, G. E. Cirlinb

a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
b Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
c Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
d Ioffe Institute, St. Petersburg
Full-text PDF (485 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2018.11.46591.13
Abstract: The possibility in principle of the MBE (molecular-beam epitaxy) growth of GaP and InP nanowires on a SiC substrate with a graphene layer is demonstrated for the first time. InP nanowires on such a substrate have no stacking faults and possess an ideal crystallographic quality. At the same time, GaP nanowires have structural defects of the type of twins and the reversal of crystallographic phases at the top and at the base. The results of structural measurements demonstrate that the nanowires are formed in the wurtzite phase, which is not typical of bulk III–V materials.
Keywords: Nanowires (NWs), Wurtzite Phase, Stacking Fault, Conventional Semiconductor Electronics, Effusion Source.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 16.2483.2017/4.6
Russian Science Foundation 14-12-00393
Received: 25.04.2018
Accepted: 07.05.2018
English version:
Semiconductors, 2018, Volume 52, Issue 11, Pages 1428–1431
DOI: https://doi.org/10.1134/S1063782618110210
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. R. Reznik, K. P. Kotlyar, I. V. Ilkiv, I. P. Soshnikov, S. P. Lebedev, A. A. Lebedev, D. A. Kirilenko, P. A. Alekseev, G. E. Cirlin, “MBE growth and structural properties of GaP and InP nanowires on a SiC substrate with a graphene layer”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1317–1320; Semiconductors, 52:11 (2018), 1428–1431
Citation in format AMSBIB
\Bibitem{RezKotIlk18}
\by R.~R.~Reznik, K.~P.~Kotlyar, I.~V.~Ilkiv, I.~P.~Soshnikov, S.~P.~Lebedev, A.~A.~Lebedev, D.~A.~Kirilenko, P.~A.~Alekseev, G.~E.~Cirlin
\paper MBE growth and structural properties of GaP and InP nanowires on a SiC substrate with a graphene layer
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 11
\pages 1317--1320
\mathnet{http://mi.mathnet.ru/phts5688}
\crossref{https://doi.org/10.21883/FTP.2018.11.46591.13}
\elib{https://elibrary.ru/item.asp?id=36903606}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 11
\pages 1428--1431
\crossref{https://doi.org/10.1134/S1063782618110210}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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