Abstract:
The cathodoluminescence and absorption of plastically deformed ZnS(O) single crystals are investigated in the light of band-anticrossing theory. The difference in the oxygen content in the surface layer and in the sample bulk is found using a scanning electron microscope and according to cathodoluminescence data. This fact explains the specifics of the spectral position of the fundamental absorption edge and exciton spectra. The shift dynamics of the bands of self-activated luminescence on deep A centers (SA luminescence) during deformation recrystallization with an increase in the dissolved oxygen concentration is presented. Restriction of the spectral range of the appearance of self-activated luminescence at shallow levels–“edge” luminescence–is established. The nature of the emission bands in the wavelength ranges of 336–350 and 364–390 nm is established. These results refine the energy model of ZnS(O) crystals and can be useful in the case of the practical use of their structure-sensitive properties.
Citation:
N. K. Morozova, I. N. Miroshnikova, V. G. Galstyan, “Analysis of the optical properties of plastically deformed ZnS(O) using band-anticrossing theory”, Fizika i Tekhnika Poluprovodnikov, 53:6 (2019), 793–798; Semiconductors, 53:6 (2019), 784–788
\Bibitem{MorMirGal19}
\by N.~K.~Morozova, I.~N.~Miroshnikova, V.~G.~Galstyan
\paper Analysis of the optical properties of plastically deformed ZnS(O) using band-anticrossing theory
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 6
\pages 793--798
\mathnet{http://mi.mathnet.ru/phts5485}
\crossref{https://doi.org/10.21883/FTP.2019.06.47731.8948}
\elib{https://elibrary.ru/item.asp?id=39133292}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 6
\pages 784--788
\crossref{https://doi.org/10.1134/S1063782619060125}
Linking options:
https://www.mathnet.ru/eng/phts5485
https://www.mathnet.ru/eng/phts/v53/i6/p793
This publication is cited in the following 5 articles:
N. K. Morozova, I. I. Abbasov, “Luminescence due to oxygen at structural defects in A2B6 crystals”, Indian J Phys, 2023
Tikhon Prokofyev, Alexander Ivanchenko, Volodymyr Hnatushenko, “Influence of Dislocations Move on Photoluminescence of Mn<sup>2+</sup> Ions with Various Local Surroundings in ZnS Single Crystals in the Process of Plastic Deformation”, MSF, 1078 (2022), 137
N. K. Morozova, I. N. Miroshnikova, “Anomalous edge emission from zinc selenide heavily doped with oxygen”, Semiconductors, 54:1 (2020), 102–107
V.M. Lisitsyn, A.T. Tulegenova, L.A. Lisitsyna, V.A. Vaganov, N.P. Soshchin, E.F. Polisadova, Kh.A. Abdullin, Ju Yangyang, “Photo and cathodoluminescence of commercial YAG:Ce based phosphors in UV region”, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 478 (2020), 120
V. M. Lisitsyn, V. A. Vaganov, L. A. Lisitsyna, Zh. T. Karipbayev, M. Kemere, A. T. Tulegenova, Y. Ju, Y. N. Panchenko, “Luminescence of YAG:Ce Phosphors Excited by UV Laser Radiation”, Russ Phys J, 63:6 (2020), 1003