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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 8, Pages 1128–1134
DOI: https://doi.org/10.21883/FTP.2019.08.48006.9112 (Mi phts5440) 		 
This article is cited in 7 scientific papers (total in 7 papers)

Semiconductor physics

Influence of output optical losses on the dynamic characteristics of 1.55-μm wafer-fused vertical-cavity surface-emitting lasers

S. A. Blokhina, M. A. Bobrova, A. A. Blokhinab, A. G. Kuz'menkovb, N. A. Maleeva, V. M. Ustinovb, E. S. Kolodeznyic, S. S. Rochasc, A. V. Babichevc, I. I. Novikovc, A. G. Gladyshevc, L. Ya. Karachinskyad, D. V. Denisovde, K. O. Voropaevfg, A. S. Ionovg, A. Yu. Egorovc

a Ioffe Institute, St. Petersburg
b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
d Connector Optics LLC, St. Petersburg
e Saint Petersburg Electrotechnical University "LETI"
f Yaroslav-the-Wise Novgorod State University
g JSC OKB-Planeta, Velikii Novgorod
Full-text PDF (157 kB) Citations (7)
DOI: https://doi.org/10.21883/FTP.2019.08.48006.9112
Abstract: The results of studying the dynamic characteristics of 1.55-μm single-mode vertical-cavity surface-emitting lasers (VCSELs) formed by the fusion of wafers of high-quality Bragg reflectors and an active region based on thin highly strained InGaAs/InAlGaAs quantum wells are presented. It is found that the proposed design of the active region and optical microcavity of the laser make it possible in principle to attain a high level of differential laser gain in the temperature range of 20∘C–85∘C, but weak electron localization leads to an increase in gain compression at elevated temperatures. Due to this fact, the VCSEL modulation bandwidth at 20∘C can be increased from 9.2 to 11.5 GHz due to an increase in output optical losses, while the modulation bandwidth at 85∘C does not exceed 8.5 GHz, depends weakly on the output optical losses, and is mainly limited by the optical-gain saturation.
Keywords: surface-emitting laser, wafer fusion, modulation bandwidth, photon-cavity lifetime.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 14.578.21.0253
This work was supported by the Ministry of Science and Higher Education of the Russian Federation within the Federal target program “Research and Development in Priority Areas of the Science and Technology Complex of Russia for 2014–2020” (agreement no. 14.578.21.0253, unique identifier RFMEFI57817X0253).
Received: 25.03.2019
Revised: 01.04.2019
Accepted: 01.04.2019
English version:
Semiconductors, 2019, Volume 53, Issue 8, Pages 1104–1109
DOI: https://doi.org/10.1134/S1063782619080074
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. A. Blokhin, M. A. Bobrov, A. A. Blokhin, A. G. Kuz'menkov, N. A. Maleev, V. M. Ustinov, E. S. Kolodeznyi, S. S. Rochas, A. V. Babichev, I. I. Novikov, A. G. Gladyshev, L. Ya. Karachinsky, D. V. Denisov, K. O. Voropaev, A. S. Ionov, A. Yu. Egorov, “Influence of output optical losses on the dynamic characteristics of 1.55-μm wafer-fused vertical-cavity surface-emitting lasers”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1128–1134; Semiconductors, 53:8 (2019), 1104–1109
Citation in format AMSBIB
\Bibitem{BloBobBlo19}
\by S.~A.~Blokhin, M.~A.~Bobrov, A.~A.~Blokhin, A.~G.~Kuz'menkov, N.~A.~Maleev, V.~M.~Ustinov, E.~S.~Kolodeznyi, S.~S.~Rochas, A.~V.~Babichev, I.~I.~Novikov, A.~G.~Gladyshev, L.~Ya.~Karachinsky, D.~V.~Denisov, K.~O.~Voropaev, A.~S.~Ionov, A.~Yu.~Egorov
\paper Influence of output optical losses on the dynamic characteristics of 1.55-$\mu$m wafer-fused vertical-cavity surface-emitting lasers
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 8
\pages 1128--1134
\mathnet{http://mi.mathnet.ru/phts5440}
\crossref{https://doi.org/10.21883/FTP.2019.08.48006.9112}
\elib{https://elibrary.ru/item.asp?id=41129844 }
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 8
\pages 1104--1109
\crossref{https://doi.org/10.1134/S1063782619080074}
Linking options:
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  • https://www.mathnet.ru/eng/phts/v53/i8/p1128
    • This publication is cited in the following 7 articles:
    1. Jingbiao Chen, Tiantian Shi, Duo Pan, Zheyi Ge, Jia Zhang, Zijie Liu, Xiaomin Qin, Yaqi Wang, Faraday Laser, 2025, 305  crossref
    2. Andrey Babichev, Sergey Blokhin, Andrey Gladyshev, Leonid Karachinsky, Innokenty Novikov, Alexey Blokhin, Mikhail Bobrov, Yakov Kovach, Alexander Kuzmenkov, Vladimir Nevedomsky, Nikolay Maleev, Evgenii Kolodeznyi, Kirill Voropaev, Alexey Vasilyev, Victor Ustinov, Anton Egorov, Saiyi Han, Si-Cong Tian, Dieter Bimberg, “Impact of Device Topology on the Performance of High-Speed 1550 nm Wafer-Fused VCSELs”, Photonics, 10:6 (2023), 660  crossref
    3. I. I. Novikov, I. A. Nyapshaev, A. G. Gladyshev, V. V. Andryushkin, A. V. Babichev, L. Yu. Karachinsky, Yu. M. Shernyakov, D. V. Denisov, N. V. Kryzhanovskaya, A. E. Zhukov, A. Yu. Egorov, “The Influence of the Waveguide Layer Composition on the Emission Parameters of 1550 nm InGaAs/InP Laser Heterostructures”, Semiconductors, 57:11 (2023), 492  crossref
    4. Andrey Babichev, Sergey Blokhin, Evgenii Kolodeznyi, Leonid Karachinsky, Innokenty Novikov, Anton Egorov, Si-Cong Tian, Dieter Bimberg, “Long-Wavelength VCSELs: Status and Prospects”, Photonics, 10:3 (2023), 268  crossref
    5. Andrey Babichev, Sergey Blokhin, Andrey Gladyshev, Leonid Karachinsky, Innokenty Novikov, Alexey Blokhin, Mikhail Bobrov, Nikolay Maleev, Vladislav Andryushkin, Evgenii Kolodeznyi, Dmitrii Denisov, Natalia Kryzhanovskaya, Kirill Voropaev, Victor Ustinov, Anton Egorov, Hui Li, Si-Cong Tian, Saiyi Han, Georgiy Sapunov, Dieter Bimberg, “Single-Mode High-Speed 1550 nm Wafer Fused VCSELs for Narrow WDM Systems”, IEEE Photon. Technol. Lett., 35:6 (2023), 297  crossref
    6. Sergey A. Blokhin, Andrey V. Babichev, Andrey G. Gladyshev, Leonid Ya. Karachinsky, Innokenty I. Novikov, Alexey A. Blokhin, Mikhail A. Bobrov, Nikolay A. Maleev, Vladislav V. Andryushkin, Dmitrii V. Denisov, Kirill O. Voropaev, Irina O. Zhumaeva, Victor M. Ustinov, Anton Yu. Egorov, Nikolay N. Ledentsov, “High Power Single Mode 1300-nm Superlattice Based VCSEL: Impact of the Buried Tunnel Junction Diameter on Performance”, IEEE J. Quantum Electron., 58:2 (2022), 1  crossref
    7. A.V. Apanasevich, A.A. Petrenko, V.E. Bougrov, “Polarization Instabilities in Vertical-Cavity Surface-Emitting Lasers”, Rev Adv Mater Tech, 4:1 (2022), 9  crossref
    Citing articles in Google Scholar: Russian citations, English citations
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