Abstract:
The results of investigations of the optical-absorption spectra of bismuth-silicate (Bi12SiO20) single crystals are presented. The band-gap width and the characteristic Urbach energy are determined. The effect of preliminary X-ray irradiation on the behavior of the experimental spectral dependences and the values of the characteristic parameters induced by the bismuth-silicate defect structure is established.
Citation:
V. T. Avanesyan, I. V. Piskovatskova, V. M. Stozharov, “Effect of X-ray radiation on the optical properties of photorefractive bismuth-silicate crystals”, Fizika i Tekhnika Poluprovodnikov, 53:8 (2019), 1043–1046; Semiconductors, 53:8 (2019), 1024–1027
\Bibitem{AvaPisSto19}
\by V.~T.~Avanesyan, I.~V.~Piskovatskova, V.~M.~Stozharov
\paper Effect of X-ray radiation on the optical properties of photorefractive bismuth-silicate crystals
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 8
\pages 1043--1046
\mathnet{http://mi.mathnet.ru/phts5426}
\crossref{https://doi.org/10.21883/FTP.2019.08.47992.9115}
\elib{https://elibrary.ru/item.asp?id=41129828}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 8
\pages 1024--1027
\crossref{https://doi.org/10.1134/S1063782619080049}
Linking options:
https://www.mathnet.ru/eng/phts5426
https://www.mathnet.ru/eng/phts/v53/i8/p1043
This publication is cited in the following 4 articles:
M. Isik, N.M. Gasanly, “Linear and nonlinear optical characteristics of Bi12SiO20 single crystals”, Optical Materials, 131 (2022), 112692
V. T. Avanesyan, P. S. Provotorov, V. M. Stozharov, M. M. Sychov, A. A. Eruzin, “Spectroscopy of zinc oxide thin films near the fundamental absorption edge”, Optics and Spectroscopy, 129:11 (2021), 1196–1199
Mona A. Naghmash, M. Saif, Hala R. Mahmoud, “Transition metal ions doped Bi12SiO20 as novel catalysts for the decomposition of hydrogen peroxide (H2O2)”, Journal of the Taiwan Institute of Chemical Engineers, 121 (2021), 268
M. Isik, S. Delice, H. Nasser, N.M. Gasanly, N.H. Darvishov, V.E. Bagiev, “Optical characteristics of Bi12SiO20 single crystals by spectroscopic ellipsometry”, Materials Science in Semiconductor Processing, 120 (2020), 105286