Abstract:
Two different approaches to the integration of self-assembled Ge(Si) quantum dots into two-dimensional photonic crystals are considered. One approach includes the synthesis of an ordered array of Ge(Si) quantum dots on the textured surface of a substrate followed by the formation of a photonic crystal on this array. In the other approach, the photonic crystal itself serves as a template for the ordered growth of quantum dots. It is shown that, by varying the diameter of holes of photonic crystals in the second approach, it is possible to implement the growth of quantum dots in two modes, in which quantum dots are formed inside or outside the holes of the photonic crystal. For structures with ordered quantum dots incorporated into a photonic crystal, an increase in the photoluminescence signal intensity is detected at room temperature in the spectral range 0.9–1.2 eV. This increase is attributed to the interaction of emission from the structure with radiation modes of the photonic crystal.
The part of the study concerned with the fabrication of structures with QDs incorporated into photonic crystals was supported by the Russian Foundation for Basic Research, project nos. 16-29-14031 and 19-42-540002-r_a. The part of the study concerned with luminescence measurements was supported by the Russian Foundation for Basic Research, project no. 18-29-20016-mk.
Citation:
Zh. V. Smagina, V. A. Zinovyev, E. E. Rodyakina, B. I. Fomin, M. V. Stepikhova, A. N. Yablonskii, S. A. Gusev, A. V. Novikov, A. V. Dvurechenskii, “Ordered arrays of Ge(Si) quantum dots embedded in two-dimensional photonic crystals”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1366–1371; Semiconductors, 53:10 (2019), 1329–1333
This publication is cited in the following 7 articles:
Sandip Swarnakar, Venkatrao Palacharla, Arjuna Muduli, Santosh Kumar, “Design and optimization of photonic crystal based all-optical logic gate with enhanced contrast ratio”, Opt Quant Electron, 55:7 (2023)
Zh. V. Smagina, V. A. Zinovyev, M. V. Stepikhova, A. V. Peretokin, S. A. Dyakov, E. E. Rodyakina, A. V. Novikov, A. V. Dvurechenskii, “Dependence of the Luminescence Properties of Ordered Groups of Ge(Si) Nanoislands on the Parameters of the Pit-Patterned Surface of a Silicon-on-Insulator Substrate”, Semiconductors, 56:2 (2022), 101
Zh.V. Smagina, V.A. Zinovyev, A.F. Zinovieva, M.V. Stepikhova, A.V. Peretokin, E.E. Rodyakina, S.A. Dyakov, A.V. Novikov, A.V. Dvurechenskii, “Luminescent properties of spatially ordered Ge/Si quantum dots epitaxially grown on a pit-patterned “silicon-on-insulator” substrate”, Journal of Luminescence, 249 (2022), 119033
S.A. Rudin, V.A. Zinovyev, Zh.V. Smagina, P.L. Novikov, A.V. Nenashev, K.V. Pavsky, “Groups of Ge nanoislands grown outside pits on pit-patterned Si substrates”, Journal of Crystal Growth, 593 (2022), 126763
Alexey V. Novikov, Zhanna V. Smagina, Margarita V. Stepikhova, Vladimir A. Zinovyev, Sergey A. Rudin, Sergey A. Dyakov, Ekaterina E. Rodyakina, Alexey V. Nenashev, Sergey M. Sergeev, Artem V. Peretokin, Anatoly V. Dvurechenskii, “One-Stage Formation of Two-Dimensional Photonic Crystal and Spatially Ordered Arrays of Self-Assembled Ge(Si) Nanoislandson Pit-Patterned Silicon-On-Insulator Substrate”, Nanomaterials, 11:4 (2021), 909
A. I. Yakimov, A. A. Bloshkin, V. V. Kirienko, A. V. Dvurechenskii, D. E. Utkin, “Increase in the photocurrent in layers of Ge/Si quantum dots by modes of a two-dimensional photonic crystal”, JETP Letters, 113:8 (2021), 498–503
Zh. V. Smagina, A. V. Novikov, M. V. Stepikhova, V. A. Zinov'ev, E. E. Rodyakina, A. V. Nenashev, S. M. Sergeev, A. V. Peretokin, P. A. Kuchinskaya, M. V. Shaleev, S. A. Gusev, A. V. Dvurechenskii, “Luminescence of spatially ordered self-assembled solitary Ge(Si) nanoislands and their groups incorporated into photonic crystals”, Semiconductors, 54:8 (2020), 853–859