Abstract:
The results of studies of the effect of illumination on the frequency dependence of the electrical parameters of bismuth silicate Bi12SiO20 single crystals are presented. Illumination in the visible spectral region induces a change in the dielectric parameters (the photodielectric effect) and the manifestation of photoconductivity in the low-frequency region under study. The hopping character of conduction in the dark and upon excitation with light is established. The possible mechanisms of the photodielectric effect and charge transport in the crystals are discussed.
Citation:
V. T. Avanesyan, I. V. Piskovatskova, “Photodielectric effect in Bi12SiO20 sillenite crystals”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 22–24; Semiconductors, 54:1 (2020), 19–21
Wenliu Luo, Ling Yang, Mao Ye, Yanghong Ou, Jiwen Xu, Huarui Xu, “Photodielectric and Luminescence Properties of (K0.5Na0.5)NbO3-Based Ceramics Modified by (Sr0.5Sm0.5)(Mg0.5Nb0.5)O3”, J. Electron. Mater., 53:2 (2024), 907
Marcin Kowalczyk, Marcin Kaczkan, Andrzej Majchrowski, Michał Malinowski, “A Comparative Study of Eu3+-Doped Sillenites: Bi12SiO20 (BSO) and Bi12GeO20 (BGO)”, Materials, 16:4 (2023), 1621
Indranil Bhaumik, V. L. Ananthu Vijayan, Rajeev Bhatt, Mohammad Soharab, Sarveswaran Ganesamoorthy, Ashwani Kumar Karnal, “Crystal Interface Control at Low Thermal Gradient and Investigation of the Effect of Cr on the Crystal Structure and Optical Properties of Bismuth Silicate”, Physica Status Solidi (b), 258:12 (2021)