Abstract:
Organic field-effect transistors with styryl fullerene as a semi conductor layer applied by centrifugation are considered. Electron mobility in the transistors was 0.067 ± 10% cm2 V−1 s−1, whereas the mobility of electrons in these devices after the vacuum deposition of a semiconductor layer was much lower (0.023 ± 10% cm2 V−1 s−1).
Citation:
A. R. Tuktarov, N. M. Chobanov, Z. R. Sadretdinova, R. B. Salikhov, I. N. Mullagaliev, T. R. Salikhov, U. M. Dzhemilev, “New n-type semiconductor material based on styryl fullerene for organic field-effect transistors”, Mendeleev Commun., 31:5 (2021), 641–643
Linking options:
https://www.mathnet.ru/eng/mendc1008
https://www.mathnet.ru/eng/mendc/v31/i5/p641
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