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Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 89, Issue 3, Pages 421–425
DOI: https://doi.org/10.21883/JTF.2019.03.47179.184-18 (Mi jtf5672) 		 
This article is cited in 9 scientific papers (total in 9 papers)

Physics of nanostructures

Silicon with magnetic nanoclusters of manganese atoms as a new ferromagnetic material

M. K. Bakhadyrkhanov, H. M. Iliev, G. Kh. Mavlonov, K. S. Ayupov, S. B. Isamov, S. A. Tachilin

Tashkent State Technical University named after Islam Karimov
Full-text PDF (272 kB) Citations (9)
DOI: https://doi.org/10.21883/JTF.2019.03.47179.184-18
Abstract: Photosensitivity of the negative magnetoresistance (NMR) of silicon containing magnetic nanoclusters of manganese atoms is revealed under background and IR (up to $\lambda$ = 3 $\mu$m) irradiation at room temperature. It is shown that irradiation leads to a significant decrease in the NMR (NMR suppression) and sign inversion of the NMR at higher radiation intensities. Regularities of variations in the NMR and conditions for sign inversion are determined.
Received: 13.05.2018
English version:
Technical Physics, 2019, Volume 64, Issue 3, Pages 385–388
DOI: https://doi.org/10.1134/S1063784219030046
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. K. Bakhadyrkhanov, H. M. Iliev, G. Kh. Mavlonov, K. S. Ayupov, S. B. Isamov, S. A. Tachilin, “Silicon with magnetic nanoclusters of manganese atoms as a new ferromagnetic material”, Zhurnal Tekhnicheskoi Fiziki, 89:3 (2019), 421–425; Tech. Phys., 64:3 (2019), 385–388
Citation in format AMSBIB
\Bibitem{BakIliMav19}
\by M.~K.~Bakhadyrkhanov, H.~M.~Iliev, G.~Kh.~Mavlonov, K.~S.~Ayupov, S.~B.~Isamov, S.~A.~Tachilin
\paper Silicon with magnetic nanoclusters of manganese atoms as a new ferromagnetic material
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 89
\issue 3
\pages 421--425
\mathnet{http://mi.mathnet.ru/jtf5672}
\crossref{https://doi.org/10.21883/JTF.2019.03.47179.184-18}
\elib{https://elibrary.ru/item.asp?id=37643894}
\transl
\jour Tech. Phys.
\yr 2019
\vol 64
\issue 3
\pages 385--388
\crossref{https://doi.org/10.1134/S1063784219030046}
Linking options:
  • https://www.mathnet.ru/eng/jtf5672
  • https://www.mathnet.ru/eng/jtf/v89/i3/p421
    • This publication is cited in the following 9 articles:
    1. Kh. M. Iliev, S. V. Koveshnikov, B. O. Isakov, E. Zh. Kosbergenov, G. A. Kushiev, Z. B. Khudoynazarov, “The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms”, Surf. Engin. Appl.Electrochem., 60:4 (2024), 633  crossref
    2. N. F. Zikrillaev, S. B. Isamov, S. V. Koveshnikov, Z. T. Kenzhaev, Kh. S. Turekeev, “Codiffusion of Gallium and Phosphorus Atoms in Silicon”, Surf. Engin. Appl.Electrochem., 59:2 (2023), 210  crossref
    3. Nurulla F. Zikrillayev, Giyosiddin Kh. Mavlonov, Levent Trabzon, Sergey V. Koveshnikov, Zoir T. Kenzhaev, Timur B. Ismailov, Yoldoshali A. Abduganiev, “Magnetic Properties of Silicon with Paramagnetic Impurity Atoms”, East Eur. J. Phys., 2023, no. 3, 380  crossref
    4. Mavlonov Giyosiddin, Usmonov Anvar, Zikrilloyev Islomshokh, Rakhmanov Ulugbek, RUDENKO INTERNATIONAL CONFERENCE “METHODOLOGICAL PROBLEMS IN RELIABILITY STUDY OF LARGE ENERGY SYSTEMS” (RSES 2021), 2552, RUDENKO INTERNATIONAL CONFERENCE “METHODOLOGICAL PROBLEMS IN RELIABILITY STUDY OF LARGE ENERGY SYSTEMS” (RSES 2021), 2023, 060009  crossref
    5. N. F. Zikrillaev, S. V. Koveshnikov, Kh. S. Turekeev, N. Norkulov, S. A. Tachilin, “Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon”, Phys. Solid State, 64:11 (2022), 587  crossref
    6. B. E. Egamberdiev, Sh. B. Utamurodova, S. A. Tachilin, M. A. Karimov, K. Yu. Rashidov, A. R. Kakhramonov, M. K. Kurbanov, D. Sh. Saidov, S. U. Turopova, “Influence of Doping with Rare Earth Elements on the Parameters of Silicon Photocells”, Appl. Sol. Energy, 58:4 (2022), 490  crossref
    7. M. K. Bakhadirkhanov, Kh. M. Iliev, M. O. Tursunov, S. B. Isamov, S. V. Koveshnikov, M. Kh. Majitov, “Electrical Properties of Silicon Doped with Manganese via High-Temperature Diffusion”, Inorg Mater, 57:7 (2021), 655  crossref
    8. M. K. Bakhadyrkhanov, H. M. Iliev, G. Kh. Mavlonov, Sh. N. Ibodullaev, S. A. Tachilin, “The effect of negative magnetoresistance in silicon to create multifunctional sensors”, Tech. Phys. Lett., 48:1 (2022), 1–4  mathnet  mathnet  crossref  crossref
    9. M. K. Bakhadyrkhanov, S. B. Isamov, Sh. N. Ibodullaev, S. V. Koveshnikov, N. Norkulov, “Electric field-stimulated photoconductivity in silicon with manganese atom nanoclusters in the range of 3–8 $\mu$m”, Tech. Phys. Lett., 46:12 (2020), 1192–1195  mathnet  mathnet  crossref  crossref
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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