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Solid-State Electronics
Methods for switching radiation polarization in GaAs laser diodes
M. V. Dorokhin, B. N. Zvonkov, P. B. Demina, N. V. Dikareva, A. V. Zdoroveyshchev, A. V. Kudrin, O. V. Vikhrova, I. V. Samartsev, S. M. Nekorkin National Research Lobachevsky State University of Nizhny Novgorod
Abstract:
Operation modes of laser structures with controlled polarization of light have been studied and the results of measuring polarization characteristics are presented. The possibility of controlling both the linear and circular polarizations of light with corresponding modification of the laser design is shown. In particular, stable lasing at two orthogonally polarized modes in the near-IR range with the intensity ratio of radiation components $I_{\mathrm{TE}}/I_{\mathrm{TM}}\approx$ 4.5 is implemented. The possibility is confirmed of generation of circularly polarized radiation in edge-emitting laser diodes by magnetization of a combined semitransparent mirror with a ferromagnetic CoPt layer deposited on the end face of the laser cavity. The degree of polarization is $\pm$1.25% in the CoPt layer saturation magnetization mode.
Keywords:
semiconductors, laser diode, quantum well, polarization.
Received: 16.02.2021 Revised: 22.04.2021 Accepted: 28.04.2021
Citation:
M. V. Dorokhin, B. N. Zvonkov, P. B. Demina, N. V. Dikareva, A. V. Zdoroveyshchev, A. V. Kudrin, O. V. Vikhrova, I. V. Samartsev, S. M. Nekorkin, “Methods for switching radiation polarization in GaAs laser diodes”, Zhurnal Tekhnicheskoi Fiziki, 91:9 (2021), 1409–1414; Tech. Phys., 66:11 (2021), 1194–1199
Linking options:
https://www.mathnet.ru/eng/jtf4945 https://www.mathnet.ru/eng/jtf/v91/i9/p1409
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Abstract page: | 82 | Full-text PDF : | 100 |
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