M. M. Mahmoodian, A. V. Chaplik, “Localization of excitons on planar defects in semiconductor crystals”, Pis'ma v Zh. Èksper. Teoret. Fiz., 112:4 (2020), 246–250; JETP Letters, 112:4 (2020), 230

Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki

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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2020, Volume 112, Issue 4, Pages 246–250
DOI: https://doi.org/10.31857/S1234567820160053 (Mi jetpl6238)

This article is cited in 3 scientific papers (total in 3 papers)

CONDENSED MATTER

Localization of excitons on planar defects in semiconductor crystals

M. M. Mahmoodian^ab, A. V. Chaplik^ab

^a Novosibirsk State University, Novosibirsk, 630090 Russia
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia

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DOI: https://doi.org/10.31857/S1234567820160053

Abstract: Localized states of a large-radius exciton on a planar short-range defect, which is simulated by the potential

- V δ (z)

$-V\delta(z)$ , are studied theoretically. The ratio of the amplitude

V

$V$ to

e^{2} / ε

$e^2/\varepsilon$ (

ε

$\varepsilon$ is the dielectric constant) determines two asymptotic regimes of weak and strong localization. In both cases, the radiation lifetime of the exciton increases with

V

$V$ according to power laws

V^{1 / 4}

$V^{1/4}$ and

V

$V$ in the cases of weak and strong localization, respectively.

Received: 18.06.2020
Revised: 27.06.2020
Accepted: 10.07.2020

English version:
Journal of Experimental and Theoretical Physics Letters, 2020, Volume 112, Issue 4, Pages 230–233
DOI: https://doi.org/10.1134/S0021364020160080

Bibliographic databases:

Document Type: Article

Language: Russian

Citation: M. M. Mahmoodian, A. V. Chaplik, “Localization of excitons on planar defects in semiconductor crystals”, Pis'ma v Zh. Èksper. Teoret. Fiz., 112:4 (2020), 246–250; JETP Letters, 112:4 (2020), 230–233

Citation in format AMSBIB

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\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.

\yr 2020

\vol 112

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\pages 246--250

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\jour JETP Letters

\yr 2020

\vol 112

\issue 4

\pages 230--233

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Linking options:

https://www.mathnet.ru/eng/jetpl6238

https://www.mathnet.ru/eng/jetpl/v112/i4/p246

This publication is cited in the following 3 articles:

V. S. Krivobok, D. F. Aminev, E. E. Onishchenko, V. V. Ushakov, S. I. Chentsov, D. A. Zazymkina, JETP Letters, 117:5 (2023), 344–349
E. I. Girshova, G. Pozina, A. V. Belonovskii, M. I. Mitrofanov, I. V. Levitskii, G. V. Voznyuk, V. P. Evtikhiev, S. N. Rodin, M. A. Kaliteevskii, JETP Letters, 115:10 (2022), 574–580
P A Belov, J. Phys.: Conf. Ser., 1851:1 (2021), 012011

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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