Abstract:
Spin relaxation in the impurity band of a 2D semiconductor with spin-split spectrum and hyperfine interaction in the external magnetic field is considered. Two contributions to the spin relaxation are shown to be relevant: the one given by optimal impurity configurations with the hop-waiting time inversely proportional to the external magnetic field and another one related to electron motion over large distances. The average spin relaxation rate is calculated.
Citation:
I. S. Lyubinskiy, “Spin relaxation in the impurity band of a semiconductor in the external magnetic field”, Pis'ma v Zh. Èksper. Teoret. Fiz., 88:12 (2008), 934–938; JETP Letters, 88:12 (2008), 814–818