Abstract:
The process of formation of cobalt silicides near the graphene-silicon carbide interface by intercalation of single-layer graphene grown on the
4H- and 6H-SiC(0001) polytypes with cobalt and silicon is studied. The experiments were carried out in situ in ultrahigh vacuum. The analysis of the samples is performed by high-energy-resolution photoelectron spectroscopy using synchrotron radiation, low-energy electron diffraction, and also Raman spectroscopy, atomic-force and kelvin-probe microscopies. The thicknesses of the deposited cobalt and silicon layers is varied to 2 nm, and the sample temperature, from room temperature to 1000∘C. Co and Si atoms deposited on heated samples is found to penetrate under graphene and are localized between the buffer layer and the substrate, which leads to a transformation of the buffer layer into additional graphene layer. It is shown that the result of intercalation of the system with cobalt and silicon is the formation under two-layer graphene of a Co–Si solid solution and silicide CoSi coated by the surface Co3Si phase. It is shown that the thickness and the composition of the formed silicide films can be changed by varying the amount of the intercalated material and the order of their depositions.
Keywords:
graphene on silicon carbide, cobalt, intercalation, silicides, photoelectron spectroscopy.
Citation:
G. S. Grebenyuk, I. A. Eliseyev, S. P. Lebedev, E. Yu. Lobanova, D. A. Smirnov, V. Yu. Davydov, A. A. Lebedev, I. I. Pronin, “Intercalation synthesis of cobalt silicides under graphene grown on silicon carbide”, Fizika Tverdogo Tela, 62:3 (2020), 462–471; Phys. Solid State, 62:3 (2020), 519–528
\Bibitem{GreEliLeb20}
\by G.~S.~Grebenyuk, I.~A.~Eliseyev, S.~P.~Lebedev, E.~Yu.~Lobanova, D.~A.~Smirnov, V.~Yu.~Davydov, A.~A.~Lebedev, I.~I.~Pronin
\paper Intercalation synthesis of cobalt silicides under graphene grown on silicon carbide
\jour Fizika Tverdogo Tela
\yr 2020
\vol 62
\issue 3
\pages 462--471
\mathnet{http://mi.mathnet.ru/ftt8479}
\crossref{https://doi.org/10.21883/FTT.2020.03.49014.616}
\elib{https://elibrary.ru/item.asp?id=42776728}
\transl
\jour Phys. Solid State
\yr 2020
\vol 62
\issue 3
\pages 519--528
\crossref{https://doi.org/10.1134/S1063783420030117}
Linking options:
https://www.mathnet.ru/eng/ftt8479
https://www.mathnet.ru/eng/ftt/v62/i3/p462
This publication is cited in the following 5 articles:
Dong Yang, Fei Ma, Xianglong Bian, Qianfeng Xia, Kewei Xu, Tingwei Hu, “The growth of epitaxial graphene on SiC and its metal intercalation: a review”, J. Phys.: Condens. Matter, 36:17 (2024), 173003
Sergei O. Filnov, Dmitry A. Estyunin, Ilya I. Klimovskikh, Tatiana P. Estyunina, Vladimir A. Golyashov, Anton S. Tarasov, Nikolay N. Kosyrev, Vasily A. Komarov, Gennady S. Patrin, Anna A. Rybkina, Oleg Yu Vilkov, Alexander M. Shikin, Oleg E. Tereshchenko, Ratibor G. Chumakov, Alexey M. Lebedev, Artem G. Rybkin, “Room Temperature Ferromagnetism in Graphene/SiC(0001) System Intercalated by Fe and Co”, Physica Rapid Research Ltrs, 18:3 (2024)
S. O. Filnov, A. A. Rybkina, A. V. Tarasov, A. V. Eryzhenkov, I. A. Eliseev, V. Yu. Davydov, A. M. Shikin, A. G. Rybkin, “Analysis of Cobalt Intercalation under the Buffer Carbon Layer on a SiC(0001) Single Crystal”, J. Exp. Theor. Phys., 134:2 (2022), 188
A. A. Rybkina, S. O. Filnov, A. V. Tarasov, D. V. Danilov, M. V. Likholetova, V. Yu. Voroshnin, D. A. Pudikov, D. A. Glazkova, A. V. Eryzhenkov, I. A. Eliseyev, V. Yu. Davydov, A. M. Shikin, A. G. Rybkin, “Quasi-freestanding graphene on SiC(0001) via cobalt intercalation of zero-layer graphene”, Phys. Rev. B, 104:15 (2021)
A. A. Gogina, A. G. Rybkin, A. M. Shikin, A. V. Tarasov, L. Petaccia, G. Di Santo, I. A. Eliseyev, S. P. Lebedev, V. Yu. Davydov, I. I. Klimovskikh, “Modification of the Electronic Structure of Quasi-Free-Standing Graphene by the Adsorption and Intercalation of Mn Atoms”, J. Exp. Theor. Phys., 132:6 (2021), 906
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